| PART |
Description |
Maker |
| BC856 BC857 |
General Purpose Transistor PNP Silicon(-65V通用型硅PNP晶体 通用硅晶体管进步党（- 65V的通用型硅晶体管进步党
General Purpose Transistor PNP Silicon(-45V??????PNP?朵?绠?
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ON Semiconductor
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| 2N3906 2N3905 ON0043 2N3905-D |
General Purpose Transistors PNP Silicon
Motorola Preferred Device
From old datasheet system
General Purpose Transistors(PNP Silicon)
|
ONSEMI[ON Semiconductor]
|
| MPS2907 MPS2907A MPS2907ARLRA MPS2907ARLRE MPS2907 |
General Purpose Transistors PNP Silicon
Small Signal General Purpose PNP
General Purpose Transistors(PNP Silicon) 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| 2N4403ZL1 2N4403RLRP 2N4403RLRM 2N4403RL 2N4403RLR |
General Purpose Transistors 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Transistors, PNP Silicon
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ON Semiconductor
|
| PMBT3906YS PMBT3906YS115 |
40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd
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NXP Semiconductors N.V.
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| P82-D-18C P82-D-8C P03-26 P03-20 P03-37 P03-23 P03 |
1 ELEMENT, 43000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 24000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4300 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 175000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2400 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 300 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8600 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 40000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 600 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 60 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
ITT Interconnect Solutions
|
| MMBT4403K MMBT4403KQ |
PNP General Purpose Amplifier
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2PB709ART 2PB709ART.215 |
45 V, 100 mA PNP general-purpose transistor
PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
|
NXP Semiconductors N.V.
|
| BCW30LT1 ON0175 BCW30LT1-D BCW30L |
General Purpose Transistors(PNP Silicon)
General Purpose Transistors PNP Silicon
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| CSC2001 CSA952 CSA952K CSA952L CSA952M CSA9529AW C |
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 180 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 135 - 270 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 200 - 400 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 400 hFE
PNP EPITAXIAL PLANAR SILICON TRANSISTOR 进步党平面外延硅晶体
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Continental Device India Limited
CDIL
Continental Device India, Ltd.
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